STRAINED QUANTUM-WELL MODULATION-DOPED INGASB/ALGASB STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

KLEM, JF ^{[1
]}

LOTT, JA ^{[1
]}

SCHIRBER, JE ^{[1
]}

KURTZ, SR ^{[1
]}

LIN, SY ^{[1
]}

机构：

[1] PRINCETON UNIV,PRINCETON,NJ 08544

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 03期

关键词：

ALUMINUM GALLIUM ANTIMONIDE; FIELD-EFFECT TRANSISTORS; HOLE TRANSPORT;

D O I：

10.1007/BF02661383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained single quantum well InGaSb/AlGaSb structures for field-effect transistor applications have been grown by molecular beam epitaxy. Modulation-doped p-type structures have been characterized by a variety of techniques, including Hall effect, Shubnikov-de Haas measurements, and cyclotron resonance. These structures exhibit improved hole transport in comparison to similar GaSb/AlGaSb structures as a result of strain-splitting of the valence band. P-channel field-effect transistors fabricated in this system exhibited a maximum transconductance of 51 and 161 mS/mm at 300 and 77K, respectively, for a 1.2 mum gate-length device.

引用

页码：315 / 321

页数：7

共 15 条

[11] INAS-ALSB HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FABRICATED USING ARGON IMPLANTATION FOR DEVICE ISOLATION [J].