METALORGANIC VAPOR-PHASE EPITAXY OF P-TYPE ZNSE AND P/N JUNCTION DIODES

Growth parameters for metalorganic vapor-phase epitaxy of p-type ZnSe were discussed. The key techniques for high quality p-type doping were found to be low temperature (e.g., 350 degrees C) growth using alkyl precursors with above-band gap photoirradiation, nitrogen doping from tertiarybutylamine, and post-growth thermal annealing (e.g., 500 degrees C, 30 min). The net acceptor concentration obtained in this manner was 1 X 10(17) cm(-3). The p/n homojunction diodes fabricated applying the annealing technique showed well-defined current-voltage characteristics and blue electroluminescence from the p-type layer at 77 K.