DEEP-LEVEL-FREE ALXGA1-XAS (X=0.22) LAYER GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：9

作者：

HUANG, ZC

YANG, B

CHEN, HK

CHEN, JC

机构：

[1] Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期

关键词：

D O I：

10.1063/1.113695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se) doping (8.4×1016 cm-3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep-level transient spectroscopy. We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78As can be eliminated by Se doping. In addition, a deep hole level located at EV+0.65 eV was found in highly Se-doped Al0.22Ga0.78As epilayers. We suggest that low Se doping (<2×1017 cm-3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.© 1995 American Institute of Physics.

引用

页码：2745 / 2747

页数：3

共 13 条

[1] CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40) [J].