共 10 条
[1]
ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (10)
:L627-L629
[2]
COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
[J].
PHYSICAL REVIEW B,
1984, 30 (08)
:4481-4492
[3]
EFFECT OF GROWTH-CONDITIONS ON STOICHIOMETRY IN MBE-GROWN GAAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:753-755
[4]
DEEP ELECTRON TRAPS IN ALAS-GAAS SUPERLATTICES AS STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1988, 27 (02)
:192-195
[5]
A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (12)
:L928-L931
[7]
CHARACTERIZATION OF THE DX CENTER IN THE INDIRECT ALXGA1-XAS ALLOY
[J].
PHYSICAL REVIEW B,
1988, 37 (02)
:1043-1046
[8]
DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (02)
:L143-L146
[9]
THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS
[J].
PHYSICAL REVIEW B,
1986, 34 (04)
:2664-2669
[10]
A SIMPLE CALCULATION OF THE DX CENTER CONCENTRATION BASED ON AN L-DONOR MODEL
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (10)
:L821-L823