COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES - THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFETS

被引：24

作者：

SYAU, TY ^{[1
]}

VENKATRAMAN, P ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,POWER SEMICOND RES CTR,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 05期

关键词：

D O I：

10.1109/16.285034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three new ultralow specific on-resistance, vertical channel, power UMOSFET structures, with a trench (UMOS) gate extending all the way between N+ source and the N+ substrate (drain), are compared with the conventional UMOSFET structure. Specific on-resistances in the range of 100-250 muOMEGAcm2 have been experimentally demonstrated for devices capable of supporting 25 V. This is due to current conduction via an accumulation and/or inversion layer formed under gate bias along the trench gate surface, resulting in the lowest specific on-resistance ever reported.

引用

页码：800 / 808

页数：9

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