共 8 条
REFILLING SILICON GROOVES BY LIQUID-PHASE EPITAXY
被引:2
作者:

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
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关键词:
D O I:
10.1149/1.2123685
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
引用
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页码:2819 / 2823
页数:5
相关论文
共 8 条
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BALIGA, BJ
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DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS
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BALIGA, BJ
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h-index: 0
机构: General Electric Company, Corporate Research and Development Center, Schenectady
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BALIGA, BJ
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BALIGA, BJ
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BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977, 124 (10)
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BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301 GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
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LIQUID-PHASE EPITAXIAL SILICON DIODES - N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES
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BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980, 127 (05)
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KENDALL, DL
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TEXAS INSTR INC,DALLAS,TX 75222 TEXAS INSTR INC,DALLAS,TX 75222
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TEXAS INSTR INC,SEMICOND RES & DEV LABS,DALLAS,TX 75222 TEXAS INSTR INC,SEMICOND RES & DEV LABS,DALLAS,TX 75222
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WESSELS, BW
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机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301 GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301 GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301