GROWTH OF HIGH-MOBILITY 3C-SIC EPILAYERS BY CHEMICAL VAPOR-DEPOSITION

被引：35

作者：

SHINOHARA, M ^{[1
]}

YAMANAKA, M ^{[1
]}

DAIMON, H ^{[1
]}

SAKUMA, E ^{[1
]}

OKUMURA, H ^{[1
]}

MISAWA, S ^{[1
]}

ENDO, K ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

CRYSTALS - Epitaxial Growth - ELECTRIC PROPERTIES - SEMICONDUCTING SILICON COMPOUNDS - Charge Carriers;

D O I：

10.1143/JJAP.27.L434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Non-doped 3C-SiC epilayers having mobility higher than 750 cm**2/(V multiplied by (times) s) at room temperature and 3000 cm**2/(V multiplied by (times) s) around 66 K were obtained for the first time, using large size (60 multiplied by 70 mm**2) Si substrates. The conditions for obtaining such high-mobility epilayers are discussed in terms of the distribution of the electrical properties over the epilayers and their substrate size dependence.

引用

页码：L434 / L436

页数：3

共 7 条

[1] THEORETICALLY PREDICTED AND EXPERIMENTALLY DETERMINED EFFECTS OF THE SI/(SI + C) GAS-PHASE RATIO ON THE GROWTH AND CHARACTER OF MONOCRYSTALLINE BETA SILICON-CARBIDE FILMS [J].