ONE-CHIP OPTICAL TRANSMITTER WITH A MICROCLEAVED FACET ALGAAS/GAAS GRIN-SCH SQW LASER

被引：2

作者：

NOBUHARA, H

KUNO, M

MAKIUCHI, M

FUJII, T

WADA, O

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/JQE.1987.1073326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

OPTOELECTRONIC DEVICES

引用

页码：160 / 163

页数：4

共 8 条

[1] MONOLITHIC OPTOELECTRONIC INTEGRATION OF A GAALAS LASER, A FIELD-EFFECT TRANSISTOR, AND A PHOTODIODE
BARCHAIM, N
LAU, KY
URY, I
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 941 - 943
[2] VERY LOW THRESHOLD CURRENT GAAS-ALGAAS GRIN-SCH LASERS GROWN BY MBE FOR OEIC APPLICATIONS
FUJII, T
YAMAKOSHI, S
NANBU, K
WADA, O
HIYAMIZU, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 259 - 261
[3] HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE
ITO, M
KUMAI, T
HAMAGUCHI, H
MAKIUCHI, M
NAKAI, K
WADA, O
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1129 - 1131
[4] MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS
MIURA, S
MACHIDA, H
WADA, O
NAKAI, K
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 389 - 391
[5] GRIN-SCH SQW LASER PHOTODIODE ARRAY BY IMPROVED MICROCLEAVED FACET PROCESS
NOBUHARA, H
WADA, O
FUJII, T
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 718 - 719
[6] MONOLITHIC INTEGRATION OF A LOW THRESHOLD CURRENT QUANTUM WELL LASER AND A DRIVER CIRCUIT ON A GAAS SUBSTRATE
SANADA, T
YAMAKOSHI, S
HAMAGUCHI, H
WADA, O
FUJII, T
HORIMATSU, T
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 226 - 228
[7] TANAKA TP, 1985, TOPIC M OPTIC FIBER
[8] ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE
WADA, O
HAMAGUCHI, H
MIURA, S
MAKIUCHI, M
NAKAI, K
HORIMATSU, H
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 981 - 983

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