CHARACTERIZATION OF THE SWITCHING IN TUNNEL MISS DEVICES

被引：2

作者：

CAMPABADAL, F

AYMERICHHUMET, X

SERRAMESTRES, F

机构：

[1] Univ Autonoma de Barcelona, Barcelona, Spain, Univ Autonoma de Barcelona, Barcelona, Spain

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 04期

关键词：

D O I：

10.1016/0038-1101(86)90085-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：381 / 385

页数：5

共 21 条

[1] CHARACTERIZATION OF INTERFACE STATES IN THIN-FILMS OF THERMALLY GROWN SIO2 [J].

CAMPABADAL, F ;

AYMERICHHUMET, X ;

SERRAMESTRES, F .

VACUUM, 1984, 34 (10-1) :1005-1007

[2] TRAP-ASSISTED TUNNELING IN MIS AND SCHOTTKY STRUCTURES [J].

CAMPABADAL, F ;

MILIAN, V ;

AYMERICHHUMET, X .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (01) :223-236

[3]

CARD HC, 1979, I PHYS C SER, V50, P140

[4]

CHICK KC, 1979, SOLID ST ELECTRON, V22, P589

[5]

DEMATTOS ACF, 1981, 11TH EUR SOL STAT DE

[6]

DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P160

[7] EXPERIMENTAL STUDIES OF SWITCHING IN METAL SEMI-INSULATING N-P+ SILICON DEVICES [J].

ELBADRY, A ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :963-966

[8]

ESSAID A, 1981, 11TH EUR SOL STAT DE

[9] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE [J].

HABIB, SED ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :181-192

[10] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .2. AVALANCHE MODE [J].

HABIB, SED ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1980, 23 (05) :497-505

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