OBSERVATION OF SLOW DANGLING-BOND RELAXATION IN P-TYPE HYDROGENATED AMORPHOUS-SILICON

被引：23

作者：

CARLEN, MW

XU, YQ

CRANDALL, RS

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect D of p-type a-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the D defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials. © 1995 The American Physical Society.

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页码：2173 / 2179

页数：7

相关论文

共 24 条

[1]

[Anonymous], COMMUNICATION

[2] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J].

AUSTIN, IG ;

NASHASHIBI, TS ;

SEARLE, TM ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :373-391

[3] DANGLING BOND IN A SI-H [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2203-2206

[4]

BRANZ HM, 1994, MATER RES SOC SYMP P, V336, P129, DOI 10.1557/PROC-336-129

[5] DANGLING-BOND RELAXATION AND DEEP-LEVEL MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].

BRANZ, HM ;

SCHIFF, EA .

PHYSICAL REVIEW B, 1993, 48 (12) :8667-8671

[6] DANGLING BONDS IN DOPED AMORPHOUS-SILICON - EQUILIBRIUM, RELAXATION, AND TRANSITION ENERGIES [J].

BRANZ, HM .

PHYSICAL REVIEW B, 1989, 39 (08) :5107-5115

[7] OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

COHEN, JD ;

LEEN, TM ;

RASMUSSEN, RJ .

PHYSICAL REVIEW LETTERS, 1992, 69 (23) :3358-3361

[8]

COHEN JD, 1993, J NONCRYST SOLIDS, V164, P327

[9] DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070

[10]

CRANDALL RS, 1991, AIP CONF PROC, V234, P154, DOI 10.1063/1.41023