OBSERVATION OF SLOW DANGLING-BOND RELAXATION IN P-TYPE HYDROGENATED AMORPHOUS-SILICON

被引:23
作者
CARLEN, MW
XU, YQ
CRANDALL, RS
机构
[1] National Renewable Energy Laboratory, Golden
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 04期
关键词
D O I
10.1103/PhysRevB.51.2173
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect D of p-type a-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the D defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials. © 1995 The American Physical Society.
引用
收藏
页码:2173 / 2179
页数:7
相关论文
共 24 条
[1]  
[Anonymous], COMMUNICATION
[2]   PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J].
AUSTIN, IG ;
NASHASHIBI, TS ;
SEARLE, TM ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :373-391
[3]   DANGLING BOND IN A SI-H [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2203-2206
[4]  
BRANZ HM, 1994, MATER RES SOC SYMP P, V336, P129, DOI 10.1557/PROC-336-129
[5]   DANGLING-BOND RELAXATION AND DEEP-LEVEL MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].
BRANZ, HM ;
SCHIFF, EA .
PHYSICAL REVIEW B, 1993, 48 (12) :8667-8671
[6]   DANGLING BONDS IN DOPED AMORPHOUS-SILICON - EQUILIBRIUM, RELAXATION, AND TRANSITION ENERGIES [J].
BRANZ, HM .
PHYSICAL REVIEW B, 1989, 39 (08) :5107-5115
[7]   OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
COHEN, JD ;
LEEN, TM ;
RASMUSSEN, RJ .
PHYSICAL REVIEW LETTERS, 1992, 69 (23) :3358-3361
[8]  
COHEN JD, 1993, J NONCRYST SOLIDS, V164, P327
[9]   DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].
CRANDALL, RS .
PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070
[10]  
CRANDALL RS, 1991, AIP CONF PROC, V234, P154, DOI 10.1063/1.41023