GOLD-RELATED ELECTRON-PARAMAGNETIC-RES CENTERS OF LOW SYMMETRY IN SILICON

被引:11
作者
HOHNE, M
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 119卷 / 02期
关键词
D O I
10.1002/pssb.2221190244
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K117 / K121
页数:5
相关论文
共 14 条
[1]   PROPERTIES OF GOLD-DOPED SILICON [J].
COLLINS, CB ;
CARLSON, RO ;
GALLAGHER, CJ .
PHYSICAL REVIEW, 1957, 105 (04) :1168-1173
[2]   STRAIN-MODULATED ELECTRON-SPIN-RESONANCE STUDY OF PT- IN SILICON [J].
HENNING, JCM ;
EGELMEERS, ECJ .
PHYSICAL REVIEW B, 1983, 27 (07) :4002-4012
[3]   ELECTRON-PARAMAGNETIC RESONANCE OF GOLD IN SILICON .2. CLUSTER CENTERS [J].
HOHNE, M .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1982, 109 (02) :525-534
[4]   ELECTRON-PARAMAGNETIC RESONANCE OF GOLD IN SILICON .1. SINGLE ATOMS - STRONG NUCLEAR-QUADRUPOLE EFFECT [J].
HOHNE, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (02) :651-659
[5]   ELECTRON-PARAMAGNETIC-RES OBSERVATION OF AN AU-FE COMPLEX IN SILICON .1. EXPERIMENTAL-DATA [J].
KLEINHENZ, RL ;
LEE, YH ;
CORBETT, JW ;
SIEVERTS, EG ;
MULLER, SH ;
AMMERLAAN, CAJ .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (02) :363-371
[6]   SELF-CONSISTENT 2ND-ORDER PERTURBATION TREATMENT OF MULTIPLET STRUCTURES USING LOCAL-DENSITY THEORY [J].
LANNOO, M ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :943-954
[7]   EVIDENCE THAT THE GOLD DONOR AND ACCEPTOR IN SILICON ARE 2 LEVELS OF THE SAME DEFECT [J].
LEDEBO, LA ;
WANG, ZG .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :680-682
[8]  
LEE YH, 1979, I PHYS C SERIES, V46, P521
[9]   PROPERTIES OF SOME DEFECT COMPLEXES OF GOLD IN SILICON [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02) :473-482
[10]   STRUCTURAL BONDING OF DEEP LEVEL DEFECTS AND THE NATURE OF AMPHOTERIC CENTERS IN SILICON [J].
LOWTHER, JE .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (19) :3665-3679