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BULK AND SURFACE EFFECTS OF HEAT-TREATMENT OF P-TYPE INP CRYSTALS
被引:36
作者
:
WONG, CCD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
WONG, CCD
[
1
]
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
BUBE, RH
[
1
]
机构
:
[1]
STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 55卷
/ 10期
关键词
:
D O I
:
10.1063/1.332889
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3804 / 3812
页数:9
相关论文
共 26 条
[1]
LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(09)
: 1408
-
1413
[2]
PLANAR INP AVALANCHE PHOTO-DIODE WITH ZN-DIFFUSED GUARD RING
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
ELECTRONICS LETTERS,
1981,
17
(08)
: 292
-
294
[3]
INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
BARRERA, JS
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
BARRERA, JS
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
ARCHER, RJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 1023
-
1030
[4]
CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BETTINI, M
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
: 865
-
870
[5]
CARSLAW HS, 1959, CONDUCTION HEAT SOLI
[6]
EBERSPACHER C, 1983, THESIS STANFORD U
[7]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[8]
NORMAL (INDIUM TIN OXIDE) PARA-INP SOLAR-CELLS
GOUSKOV, L
论文数:
0
引用数:
0
h-index:
0
GOUSKOV, L
LUQUET, H
论文数:
0
引用数:
0
h-index:
0
LUQUET, H
ESTA, J
论文数:
0
引用数:
0
h-index:
0
ESTA, J
GRIL, C
论文数:
0
引用数:
0
h-index:
0
GRIL, C
[J].
SOLAR CELLS,
1981,
5
(01):
: 51
-
66
[9]
EFFECT OF HEAT-TREATMENT ON N-TYPE BULK GROWN AND VAPOR-PHASE EPITAXIAL INDIUM-PHOSPHIDE
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
GUHA, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HASEGAWA, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 27
-
28
[10]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
←
1
2
3
→
共 26 条
[1]
LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(09)
: 1408
-
1413
[2]
PLANAR INP AVALANCHE PHOTO-DIODE WITH ZN-DIFFUSED GUARD RING
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
ELECTRONICS LETTERS,
1981,
17
(08)
: 292
-
294
[3]
INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
BARRERA, JS
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
BARRERA, JS
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
ARCHER, RJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 1023
-
1030
[4]
CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BETTINI, M
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
: 865
-
870
[5]
CARSLAW HS, 1959, CONDUCTION HEAT SOLI
[6]
EBERSPACHER C, 1983, THESIS STANFORD U
[7]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[8]
NORMAL (INDIUM TIN OXIDE) PARA-INP SOLAR-CELLS
GOUSKOV, L
论文数:
0
引用数:
0
h-index:
0
GOUSKOV, L
LUQUET, H
论文数:
0
引用数:
0
h-index:
0
LUQUET, H
ESTA, J
论文数:
0
引用数:
0
h-index:
0
ESTA, J
GRIL, C
论文数:
0
引用数:
0
h-index:
0
GRIL, C
[J].
SOLAR CELLS,
1981,
5
(01):
: 51
-
66
[9]
EFFECT OF HEAT-TREATMENT ON N-TYPE BULK GROWN AND VAPOR-PHASE EPITAXIAL INDIUM-PHOSPHIDE
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
GUHA, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HASEGAWA, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 27
-
28
[10]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
←
1
2
3
→