CRYOGENIC AND HIGH-TEMPERATURE OPERATION OF AL0.52IN0.48P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：8

作者：

KUO, JM ^{[1
]}

CHAN, YJ ^{[1
]}

机构：

[1] NATL CENT UNIV,CHUNGLI 32054,TAIWAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cryogenic and high temperature characterization of Al0.52In0.48P/In0.2Ga0.8As high electron mobility transistors (HEMTs) with 1 mum-long gates, grown by gas-source molecular-beam epitaxy is being reported. Bias-stress measurements at 77 K in the dark showed only 18 mV threshold voltage shift, confirming that trapping effects are negligible in this material system. Successful operation of these HEMTs at temperatures up to 300-degrees-C has been achieved. These results suggest that AlInP/InGaAs HEMTs have potential for cryogenic and high temperature applications.

引用

页码：976 / 978

页数：3

共 9 条

[1] GA0.51IN0.49P/GAAS HEMTS EXHIBITING GOOD ELECTRICAL PERFORMANCE AT CRYOGENIC TEMPERATURES [J].