INVESTIGATION OF REACTIVELY SPUTTERED SILICON-NITRIDE FILMS BY COMPLEMENTARY USE OF BACKSCATTERING AND NUCLEAR-REACTION MICROANALYSIS

被引：19

作者：

RIGO, S

AMSEL, G

CROSET, M

机构：

[1] UNIV PARIS ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75005 PARIS,FRANCE

[2] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2800 / 2810

页数：11

共 46 条

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[2]

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[3] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].

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[6] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

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[7] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

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[8] THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS [J].

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[9] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS [J].

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[10] SOME PHYSICAL PROPERTIES OF SI-SI3N4 INTERFACES AND SILICON NITRIDE THIN FILMS PREPARED BY REACTIVE SPUTTERING IN NITROGEN [J].

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