CHANNELING DEPENDENCE OF ION-BEAM-INDUCED EPITAXIAL RECRYSTALLIZATION IN SILICON

被引：31

作者：

LINNROS, J

HOLMEN, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期

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D O I：

10.1063/1.336457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1513 / 1517

页数：5

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