STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES

The results are presented of a comparative study of electrically active damage introduced in silicon diodes by irradiation with the fission products of a Cf-252 source and with high energy protons. The influence of substrate doping, the oxygen content and the thermal pre-treatments on the damage formation is investigated using electrical evaluation of the diode characteristics correlated with deep level transient spectroscopy investigations. Both types of irradiation create the same dominant defect types but with different efficiencies and relative densities. A radiation hardening effect by interstitial oxygen is observed. Both the leakage current and the deep level density show a linear dependence on the irradiating particle fluence.