GETTERING MECHANISMS IN SILICON

被引：88

作者：

POLIGNANO, ML ^{[1
]}

CEROFOLINI, GF ^{[1
]}

BENDER, H ^{[1
]}

CLAEYS, C ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3030 LEUVEN,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / 876

页数：8

共 30 条

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[10] AN EXTENSION OF THE MODEL FOR THE EXTRACURRENT IN ALMOST IDEAL SILICON JUNCTION DIODES [J].

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