OPTICAL MODULATION SPECTROSCOPY OF AMORPHOUS-SEMICONDUCTORS

被引:28
作者
TAUC, J
VARDENY, Z
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
[2] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL
[3] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 03期
关键词
D O I
10.1080/13642818508240603
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:313 / 324
页数:12
相关论文
共 51 条
[21]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[22]   ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].
Lucovsky, G. .
SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302
[23]   CAPACITANCE TRANSIENT SPECTROSCOPY [J].
MILLER, GL ;
LANG, DV ;
KIMERLING, LC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448
[24]  
Mott N. F., 1979, ELECT PROCESSES NONC
[25]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[26]   LUMINESCENCE AND OPTICALLY DETECTED ELECTRON-SPIN-RESONANCE IN A-AS2S3 [J].
MURAYAMA, K ;
SUZUKI, H ;
NINOMIYA, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :915-920
[27]   PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS SIXGE1-X-H [J].
OCONNOR, P ;
TAUC, J .
PHYSICAL REVIEW LETTERS, 1979, 43 (04) :311-314
[28]   SPECTRUM OF PHOTOINDUCED OPTICAL-ABSORPTION IN ALPHA-SI-H [J].
OCONNOR, P ;
TAUC, J .
SOLID STATE COMMUNICATIONS, 1980, 36 (11) :947-949
[29]   PHOTOINDUCED MIDGAP ABSORPTION IN TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
OCONNOR, P ;
TAUC, J .
PHYSICAL REVIEW B, 1982, 25 (04) :2748-2766
[30]   PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].
ORENSTEIN, J ;
KASTNER, M .
PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424