DEPENDENCE OF HYDROGEN EVOLUTION FROM A-SI-H ON BORON DOPING AND SUBSTRATE POTENTIAL

被引:20
作者
CHEN, KJ [1 ]
FRITZSCHE, H [1 ]
机构
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
来源
SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期
关键词
D O I
10.1016/0165-1633(82)90063-6
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:205 / 214
页数:10
相关论文
共 27 条
[1]   HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS [J].
BEYER, W ;
WAGNER, H .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :783-786
[2]   EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI-H FILMS [J].
BEYER, W ;
WAGNER, H ;
MELL, H .
SOLID STATE COMMUNICATIONS, 1981, 39 (02) :375-379
[3]   HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].
BIEGELSEN, DK ;
STREET, RA ;
TSAI, CC ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846
[4]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[6]   HYDROGEN-ASSOCIATED DISORDER MODES IN AMORPHOUS SI-H FILMS [J].
CARLOS, WE ;
TAYLOR, PC .
PHYSICAL REVIEW LETTERS, 1980, 45 (05) :358-362
[7]   RECENT DEVELOPMENTS IN AMORPHOUS-SILICON SOLAR-CELLS [J].
CARLSON, DE .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :503-518
[8]   HYDROGEN PROFILING IN GAS-PHASE DOPED AND ION-IMPLANTED AMORPHOUS-SILICON FILMS [J].
DEMOND, FJ ;
MULLER, G ;
DAMJANTSCHITSCH, H ;
MANNSPERGER, H ;
KALBITZER, S ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :779-782
[9]   HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN [J].
FRITZSCHE, H ;
TANIELIAN, M ;
TSAI, CC ;
GACZI, PJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3366-3369
[10]  
FRITZSCHE H, 1977, AMORPHOUS LIQUID SEM, P3