WAVEGUIDING, SPECTRAL, AND THRESHOLD PROPERTIES OF A STRIPE GEOMETRY SINGLE QUANTUM WELL LASER

被引：13

作者：

PRINCE, FC ^{[1
]}

MATTOS, TJS ^{[1
]}

PATEL, NB ^{[1
]}

KASEMSET, D ^{[1
]}

HONG, CS ^{[1
]}

机构：

[1] ROCKWELL INT CORP,THOUSAND OAKS,CA 91360

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：634 / 639

页数：6

共 17 条

[1] CW ROOM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300-A) DIODE-LASERS AT 100 MW
BURNHAM, RD
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HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 937 - 939
[2] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
BURNHAM, RD
STREIFER, W
SCIFRES, DR
LINDSTROM, C
PAOLI, TL
HOLONYAK, N
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[3] Carslaw H. S., 1959, CONDUCTION HEAT SOLI, P75
[4] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
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HOLONYAK, N
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489
[5] DUPUIS RD, 1978, P GALLIUM ARSENIDE R, P1
[6] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
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PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[7] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER
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VOJAK, BA
HOLONYAK, N
CHIN, R
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 585 - 589
[8] VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KASEMSET, D
HONG, CS
PATEL, NB
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 912 - 914
[9] KASEMSET D, 1982, P GALLIUM ARSENIDE R, P79
[10] LOW THRESHOLD CURRENT GAAS/GAALAS GRIN-SCH STRIPE LASERS GROWN BY OMVPE
KRAKOWSKI, M
HIRTZ, P
BLONDEAU, R
HERSEE, SD
BALDY, M
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1983, 19 (25-2) : 1082 - 1084

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