SI-IMPLANTED AND MG-IMPLANTED INP, GAINAS AND SHORT-TIME PROXIMITY CAP ANNEALING

被引：19

作者：

KONIG, U ^{[1
]}

HILGARTH, J ^{[1
]}

TIEMANN, HH ^{[1
]}

机构：

[1] TELEFUNKEN ELECTR GMBH,D-7100 HEILBRONN,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF02661225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：311 / 327

页数：17

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