REFRACTIVE-INDEX AND ABSORPTION MEASUREMENT IN A THIN-LAYER BY 2 REFLECTION MEASUREMENTS

被引：2

作者：

FASOLD, D

HEHL, K

JETSCHKE, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 02期

关键词：

D O I：

10.1002/pssa.2210860204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：485 / 490

页数：6

共 7 条

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HEHL, K ;

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[4] THE PROPAGATION OF LIGHT WAVES THROUGH OXYGEN IRRADIATION INDUCED DEPTH PROFILES OF THE COMPLEX REFRACTIVE-INDEX IN SILICON [J].

HEIDEMANN, KF .

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[5] ANISOTROPIC EFFECTS IN N+-IMPLANTED LINBO3 [J].

JETSCHKE, S ;

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HEHL, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01) :207-214

[6] RADIATION DEFECTS AND OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON DIOXIDE [J].

KATENKAMP, U ;

KARGE, H ;

PRAGER, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :31-34

[7] RADIATION-DAMAGE AND NEAR EDGE OPTICAL-PROPERTIES OF NITROGEN IMPLANTED GALLIUM-ARSENIDE [J].

WESCH, W ;

WILK, E ;

HEHL, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :243-248

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