CRYSTAL-GROWTH OF COLUMN-III NITRIDES AND THEIR APPLICATIONS TO SHORT-WAVELENGTH LIGHT EMITTERS

Difficulty in growing high-quality column III nitrides on dissimilar substrates and difficulty in controlling conductivity, especially in achieving p-type conductivity had restricted their device applications for a long time. Establishment of the technique and understanding the mechanism for the heteroepitaxial growth of nitrides on a sapphire substrate and the realization of GaN and AlGaN having distinct p-type conductivity will lead to the accomplishment of high performance short wavelength light emitting devices based on column III nitrides.