COEVAPORATION PHOSPHORUS DOPING IN SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

KUBIAK, RAA ^{[1
]}

PATEL, G ^{[1
]}

LEONG, WY ^{[1
]}

HOUGHTON, R ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] CITY LONDON POLYTECH,SIR JOHN CASS FAC PHYS SCI & TECHNOL,SOLID STATE MBE RES GRP,LONDON EC3N 2EY,ENGLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 41卷 / 03期

关键词：

D O I：

10.1007/BF00616844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 235

页数：3

共 9 条

[1]

BEAN JC, 1981, DOPING PROCESSES SIL, pCH4

[2] TIN PHOSPHIDE AS A PHOSPHORUS BEAM SOURCE FOR MOLECULAR-BEAM EPITAXY [J].

CHAI, YG .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :985-987

[3]

HANSEN M, 1958, CONSTITUTION BINARY, P1088

[4] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613

[5] POTENTIAL ENHANCED SB AND AS DOPING IN SI MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RAA ;

LEONG, WY ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :565-567

[6] POTENTIAL-ENHANCED DOPING OF SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RAA ;

LEONG, WY ;

PARKER, EHC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2738-2742

[7]

KUBIAK RAA, 1985, ELECTROCHEM SOC P, V85, P169

[8]

KUBIAK RAA, 1986, APPL PHYS JUL

[9]

LEONG WY, 1985, ELECTROCHEM SOC P, V85, P140

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