VANADIUM-RELATED DEEP LEVELS IN N-SILICON DETECTED BY JUNCTION CAPACITANCE WAVE-FORM ANALYSIS

被引：5

作者：

KAWAHARA, H

OKAMOTO, Y

TAHIRA, K

MORIMOTO, J

MIYAKAWA, T

NAKASHIMA, H

机构：

[1] NATL DEF ACAD,DEPT ELECT ENGN,YOKOSUKA,KANAGAWA 239,JAPAN

[2] KYUSHU UNIV,DEPT ELECT ENGN,HIGASHI KU,FUKUOKA 812,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 01期

关键词：

DLTS; SI-V; DEEP LEVEL; EMISSION RATE SPECTRUM; WAVE-FORM ANALYSIS;

D O I：

10.1143/JJAP.31.87

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (DELTA-E = 0.08 eV, sigma = 3.2 x 10(-18) cm2), VB (DELTA-E = 0.28 eV, sigma = 2.6 x 10(-14) cm2) and VC (DELTA-E = 0.24 eV, sigma = 8.4 x 10(-18) cm2) . These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.

引用

页码：87 / 88

页数：2

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