共 14 条
- [1] ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
- [2] LOCALIZED STATES AND THE ELECTRONIC-PROPERTIES OF A HYDROGENATED DEFECT IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3246 - 3257
- [4] STRUCTURAL STUDIES OF HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1980, 2 (04): : 409 - 419
- [5] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01): : 23 - 62
- [6] PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING [J]. SOLAR ENERGY MATERIALS, 1981, 5 (03): : 229 - 316
- [9] TIME-OF-FLIGHT MEASUREMENT OF UNDOPED GLOW-DISCHARGED A-SI-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 775 - 779
- [10] MICROCRYSTALLINE FORMATION IN SPUTTERED A-SI-H-FILMS [J]. SOLID STATE COMMUNICATIONS, 1983, 45 (07) : 577 - 580