INVESTIGATION OF THE INTERSTITIAL SITE IN AS+-ION-IMPLANTED GAAS BY MEANS OF A MULTIDIRECTIONAL AND HIGH-DEPTH RESOLUTION RBS CHANNELING TECHNIQUE

被引:15
作者
NISHIZAWA, JI [1 ]
SHIOTA, I [1 ]
OYAMA, Y [1 ]
机构
[1] SEMICONDUCTOR RES INST,KAWAUCHI,SENDAI 980,JAPAN
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 01期
关键词
D O I
10.1088/0022-3719/19/1/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1 / 7
页数:7
相关论文
共 11 条
[1]  
Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561
[2]   INTERSTITIAL PROPERTIES DEDUCED FROM INTERNAL-FRICTION MEASUREMENTS ON BORON-IMPLANTED SILICON [J].
FRANK, W .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (02) :119-133
[3]   CHARACTERIZATION OF STOICHIOMETRY IN GAAS BY X-RAY-INTENSITY MEASUREMENTS OF QUASI-FORBIDDEN REFLECTIONS [J].
FUJIMOTO, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05) :L287-L289
[4]   DEPTH PROFILES OF FE AND CR IMPLANTS IN INP AFTER ANNEALING [J].
GAUNEAU, M ;
LHARIDON, H ;
RUPERT, A ;
SALVI, M .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6823-6827
[5]   ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].
GRIMALDI, MG ;
PAINE, BM ;
NICOLET, MA ;
SADANA, DK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4038-4046
[6]   GETTERING BY ION IMPLANTATION. [J].
Lecrosnier, D. .
Nuclear instruments and methods in physics research, 1983, 209-210 (Pt 1) :325-332
[7]   EPR STUDY OF NEUTRON-IRRADIATED SILICON - POSITIVE CHARGE STATE OF (100) SPLIT DI-INTERSTITIAL [J].
LEE, YH ;
GERASIMENKO, NN ;
CORBETT, JW .
PHYSICAL REVIEW B, 1976, 14 (10) :4506-4520
[8]  
NISHIZAWA J, 1986, UNPUB J PHYS D
[9]   NONSTOICHIOMETRY OF TE-DOPED GAAS [J].
NISHIZAWA, JI ;
OTSUKA, H ;
YAMAKOSHI, S ;
ISHIDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :46-56
[10]   SOLID-PHASE EPITAXIAL REGROWTH OF ION-IMPLANTED LAYERS IN GAAS [J].
NISSIM, YI ;
CHRISTEL, LA ;
SIGMON, TW ;
GIBBONS, JF ;
MAGEE, TJ ;
ORMOND, R .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :598-600