P+-N+ GAAS TUNNEL JUNCTION DIODES GROWN BY FLOW-RATE MODULATION EPITAXY

This paper discusses the p+-n+ GaAs tunnel junction diodes grown by flow-rate modulation epitaxy using carbon and silicon as p-type and n-type dopants, respectively. It also investigates the effect of the conditions of p+-n+ junction interfaces on the excess current. While the excess current drastically increases when p+- and n+ -layers are overlapped on an atomic scale, it gradually decreases and tends to saturate when the undoped layer thickness inserted at the interface is increased. These results indicate that the p+-n+ junction interfaces grown by flow-rate modulation epitaxy are quite abrupt.