PHOTOLUMINESCENCE FROM TWO-DIMENSIONAL ELECTRONS AT SINGLE HETEROJUNCTIONS

被引:7
作者
YANG, CH [1 ]
LYON, SA [1 ]
TU, CW [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
In summaryw; e have observedp hotoluminescence from two dimensionaell ectronsin single GaAs/AIGaAs heterostructureEsx citationw ith UV greatly enhances (comparedt o IR) the sensitivityo f the measurement. This luminescencper obablyo riginatesfr om free two di-mensionaell ectronrse combininwgi th holest rappedo n ac-ceptorsa t or neart hei nterface.W ith a positiveb ias; the luminescencfero m electronsa t the interfaces hifts to highere nergies.O ur observatiodne monstratethse feasibility of doingo pticals pectroscopoyn high mobilitye lec-tronsi n singleh eterostructures. The authorsw ould like to acknowledgDe. C. Tsui; M.J. Chou and J.M. Worlock for helpfuld iscussionasn d suggestionsIn. particularw; e thankD .C. Tsui for providing a varietyo f singleh eterojunctiosna mples.T he work at Princetonw as supportedin part by RCA; the GE Foundationt; h e Ford Motor Co; Bell Communications Researcha nd the National ScienceF oundationt hrough the PresidentiaYlo ung InvestigatoPrr ogram; a nd by the DefenseA dvancedR esearchP rojectsA gencyt hrought he 2DEG. The dashedli nes tracet he movement of thesefe aturews ith gateb ias;
D O I
10.1016/0749-6036(87)90070-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
10
引用
收藏
页码:269 / 271
页数:3
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