INTERSTITIAL TYPE DEFECTS IN ION-IMPLANTED SILICON

被引：15

作者：

BEREZHNOV, NI

STELMAKH, VF

CHELYADINSKII, AR

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780254

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K121 / K125

页数：5

共 14 条

[1]

AKILOV YZ, 1974, FIZ TEKH POLUPROV, V8, P30

[2]

BARANOVA EK, 1972, RAD DEFEKTY POLUPROV, P8

[3]

BOLOTOV SA, 1981, 4 VES K VZAIM AT CHA, P171

[4]

BOTVIN VA, 1972, FIZ TEKH POLUPROV, V6, P1683

[5] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J].

BROWER, KL ;

VOOK, FL ;

BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :208-&

[6] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1976, 14 (03) :872-883

[7] PHOTOCONDUCTIVITY IN NEUTRON-IRRADIATED PARA-TYPE SI [J].

CHENG, LJ ;

SWANSON, ML .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2627-&

[8] LATTICE DISORDER IN ION-IMPLANTED BORON-DOPED SILICON [J].

HIRVONEN, JK ;

EISEN, FH .

APPLIED PHYSICS LETTERS, 1971, 19 (01) :14-&

[9] EPR STUDY OF NEUTRON-IRRADIATED SILICON - POSITIVE CHARGE STATE OF (100) SPLIT DI-INTERSTITIAL [J].

LEE, YH ;

GERASIMENKO, NN ;

CORBETT, JW .

PHYSICAL REVIEW B, 1976, 14 (10) :4506-4520

[10] DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION [J].

STEIN, HJ ;

VOOK, FL ;

BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :328-&

← 1 2 →