STRUCTURAL PHASE-TRANSITION DURING HETEROEPITAXIAL GROWTH OF IRON SILICIDES ON SI(111)

被引：7

作者：

ALVAREZ, J

DEPARGA, ALV

HINAREJOS, JJ

DELAFIGUERA, J

MICHEL, EG

OCAL, C

MIRANDA, R

机构：

[1] Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt B期

关键词：

D O I：

10.1016/0169-4332(93)90583-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report here on a novel metal-semiconductor phase transition in FeSi2, induced by epitaxy on Si(111). The transition occurs at constant temperature as a function of the thickness of a silicide film with constant composition, epitaxially grown on Si(111). The phase transition consists in a change of the silicide structure from gamma-FeSi2, a metallic phase with the highly symmetric fluorite structure, to beta-FeSi2, a semiconducting phase with the low symmetry orthorhombic structure.

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收藏

页码：578 / 582

页数：5

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