LOCAL-STRUCTURE AROUND IRON AT THE SIO2 SI INTERFACE

被引：11

作者：

KITANO, T

机构：

[1] VLSI Development Division, NEC Corporation, Kanagawa, 229, 1120 Shimokuzawa, Sagamihara

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 11期

关键词：

TRANSITION METAL; IRON SILICATE; TOTAL-REFLECTION XAFS;

D O I：

10.1007/BF02665879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the local structure around iron at the SiO2/Si interface by the total-reflection fluorescence x-ray absorption fine structure technique, in conjunction with measurements of the angular dependence of x-ray fluorescence intensity. The Fe-O, Fe-Si and Fe-Fe bondings were observed around iron, in the layer formed at the SiO2/Si interface. These results show the formation of iron silicate, consisting of iron, oxygen and silicon elements. The chemical state of iron was determined from the Fe-0 bond-lengths. The Fe-valence is a mixture of Fe3+ and Fe2+, mostly Fe3+. These results indicate that the layer formed at the SiO2/Si interface is iron silicate, in which a portion of Fe3+ ions were reduced.

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页码：1027 / 1031

页数：5

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