SIMPLE FORMULAS FOR ANALYSIS OF C-V-CHARACTERISTICS OF MIS CAPACITOR

被引：11

作者：

JAKUBOWSKI, A

INIEWSKI, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 08期

关键词：

D O I：

10.1016/0038-1101(83)90037-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：755 / 756

页数：2

共 17 条

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[8] GRAPHIC METHOD OF SUBSTRATE DOPING DETERMINATION FROM C-V CHARACTERISTICS OF MIS CAPACITORS [J].

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SOLID-STATE ELECTRONICS, 1981, 24 (10) :985-987

[9] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J].

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