TRANSVERSE AND LONGITUDINAL MODE CONTROL IN SEMICONDUCTOR INJECTION-LASERS

被引：111

作者：

YAMADA, M

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 09期

关键词：

D O I：

10.1109/JQE.1983.1072059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1365 / 1380

页数：16

共 38 条

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YAMADA, M ;

HAYANO, K ;

ISHIGURO, H ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1531-1541

[32] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS [J].

YAMADA, M ;

SUEMATSU, Y .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2653-2664

[33] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE [J].

YAMADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :743-749

[34] GAIN CALCULATION OF UNDOPED GAAS INJECTION-LASER TAKING ACCOUNT OF ELECTRONIC INTRA-BAND RELAXATION [J].

YAMADA, M ;

ISHIGURO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :1279-1288

[35]

Yamada M., 1982, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE65, P614

[36] ESTIMATION OF THE INTRA-BAND RELAXATION-TIME IN UNDOPED ALGAAS INJECTION-LASER [J].

YAMADA, M ;

ISHIGURO, H ;

NAGATO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :135-142

[37]

YAMANISHI M, 1980, OQE80103 I EL COMM E, P19

[38] BROADENING MECHANISM IN SEMICONDUCTOR (GAAS) LASERS - LIMITATIONS TO SINGLE-MODE POWER EMISSION [J].

ZEE, B .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (10) :727-736

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