BEHAVIOR AND INFLUENCE OF OXYGEN IN CHROMIUM SILICIDE FORMATION

被引：26

作者：

LIEN, CD ^{[1
]}

WIELUNSKI, LS ^{[1
]}

NICOLET, MA ^{[1
]}

STIKA, KM ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91125

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 1-2期

关键词：

D O I：

10.1016/S0040-6090(83)80002-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：235 / 242

页数：8

相关论文

共 15 条

[1] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES
BLATTNER, RJ
EVANS, CA
LAU, SS
MAYER, JW
ULLRICH, BM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1732 - 1736
[2] PLATINUM SILICIDE FORMATION UNDER ULTRAHIGH-VACUUM AND CONTROLLED IMPURITY AMBIENTS
CRIDER, CA
POATE, JM
ROWE, JE
SHENG, TT
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2860 - 2868
[3] CRIDER CA, 1980, P S THIN FILM INTERF, P135
[4] GIBBONS JF, 1975, PROJECTED RANGE STAT
[5] OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM
GRUNTHANER, PJ
GRUNTHANER, FJ
SCOTT, DM
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 641 - 648
[6] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .1. ELECTRON-MICROPROBE ANALYSIS
KINGZETT, TJ
LADAS, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1729 - 1732
[7] LIEN CD, UNPUB NUCL INSTRUM M
[8] NICOLET MA, MATERIALS PROCESS CH, V6, pCH6
[9] FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER
OLOWOLAFE, JO
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5182 - 5186
[10] Poate J M, 1978, THIN FILMS INTERDIFF