ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL BEHAVIOR AND SELECTIVE ETCHING OF III-V SEMICONDUCTORS IN H2O2 AS REDOX SYSTEM

被引：28

作者：

HAROUTIOUNIAN, E ^{[1
]}

SANDINO, JP ^{[1
]}

CLECHET, P ^{[1
]}

LAMOUCHE, D ^{[1
]}

MARTIN, JR ^{[1
]}

机构：

[1] ECOLE CENT LYON, PHYSICOCHIM INTERFACES LAB, F-69130 ECULLY, FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115537

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：27 / 34

页数：8

相关论文

共 34 条

[31] LOCALIZED GAAS ETCHING WITH ACIDIC HYDROGEN-PEROXIDE SOLUTIONS
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 874 - 880
[32] UNIFIED DEFECT MODEL AND BEYOND
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
[33] SELECTIVE ETCHING OF 3-5 COMPOUNDS WITH REDOX SYSTEMS
TIJBURG, RP
VANDONGEN, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 687 - 691
[34] LOCALIZED AVALANCHE BREAKDOWN ON GAAS ELECTRODES IN AQUEOUS-ELECTROLYTES
TRANCHART, JC
HOLLAN, L
MEMMING, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1185 - 1187

← 1 2 3 4 →