FABRICATION OF SILICON QUANTUM WIRES BY ANISOTROPIC WET CHEMICAL ETCHING AND THERMAL-OXIDATION

被引：13

作者：

LIU, JL ^{[1
]}

SHI, Y ^{[1
]}

WANG, F ^{[1
]}

ZHANG, R ^{[1
]}

HAN, P ^{[1
]}

MAO, BH ^{[1
]}

ZHENG, YD ^{[1
]}

机构：

[1] NANJING UNIV, INST SOLID STATE PHYS, NANJING 210008, PEOPLES R CHINA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.588090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrafine silicon quantum wires with high-quality Si/SiO2 heterointerfaces are successfully fabricated by utilizing anisotropic wet chemical etching and subsequent thermal oxidation. It is also found that the lateral dimensions of silicon quantum wires can be well controlled by selecting the temperature of the thermal oxidation process. The cross-sectional image from a scanning electron microscope shows silicon quantum wires of high quality with the linewidth down to 20 nn. (C) 1995 American Vacuum Society.

引用

页码：2137 / 2138

页数：2

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