LOW-TEMPERATURE PROPERTIES AND PHOTOTRANSPORT IN SILICON-ON-INSULATOR FILMS SYNTHESIZED BY OXYGEN IMPLANTATION

被引：11

作者：

PAPAIOANNOU, G

CRISTOLOVEANU, S

HEMMENT, P

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,INST NATL POLYTECH GRENOBLE,CNRS,F-38031 GRENOBLE,FRANCE

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4575 / 4579

页数：5

共 19 条

[1] FORMATION OF BURIED INSULATING LAYERS BY HIGH-DOSE OXYGEN IMPLANTATION UNDER CONTROLLED TEMPERATURE CONDITIONS [J].

BRUEL, M ;

MARGAIL, J ;

STOEMENOS, J ;

MARTIN, P ;

JAUSSAUD, C .

VACUUM, 1985, 35 (12) :589-593

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[3] HIGH-SPEED, LOW-POWER, IMPLANTED-BURIED-OXIDE CMOS CIRCUITS [J].

COLINGE, JP ;

HASHIMOTO, K ;

KAMINS, T ;

CHIANG, SY ;

LIU, ED ;

PENG, SS ;

RISSMAN, P .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :279-281

[4] THERMAL DONOR AND NEW DONOR GENERATION IN SOI MATERIAL FORMED BY OXYGEN IMPLANTATION [J].

CRISTOLOVEANU, S ;

PUMFREY, J ;

SCHEID, E ;

HEMMENT, PLF ;

ARROWSMITH, RP .

ELECTRONICS LETTERS, 1985, 21 (18) :802-804

[5] SILICON ON INSULATOR MATERIAL FORMED BY OXYGEN IMPLANTATION AND HIGH-TEMPERATURE ANNEALING - CARRIER TRANSPORT, OXYGEN ACTIVITY, AND INTERFACE PROPERTIES [J].

CRISTOLOVEANU, S ;

GARDNER, S ;

JAUSSAUD, C ;

MARGAIL, J ;

AUBERTONHERVE, AJ ;

BRUEL, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2793-2798

[6] PROFILING OF INHOMOGENEOUS CARRIER TRANSPORT-PROPERTIES WITH THE INFLUENCE OF TEMPERATURE IN SILICON-ON-INSULATOR FILMS FORMED BY OXYGEN IMPLANTATION [J].

CRISTOLOVEANU, S ;

LEE, JH ;

PUMFREY, J ;

DAVIS, JR ;

ARROWSMITH, RP ;

HEMMENT, PLF .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3199-3203

[7]

ELEWA T, 1987, 17TH P EUR SOL STAT, P529

[8] OPTIMIZATION OF OXYGEN-IMPLANTED SILICON SUBSTRATES FOR CMOS DEVICES BY ELECTRICAL CHARACTERIZATION [J].

FOSTER, DJ ;

BUTLER, AL ;

BOLBOT, PH ;

ALDERMAN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :354-360

[9] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J].

HEMMENT, PLF ;

MAYDELLONDRUSZ, E ;

STEVENS, KG ;

KILNER, JA ;

BUTCHER, J .

VACUUM, 1984, 34 (1-2) :203-208

[10]

HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

← 1 2 →