SURFACE-MORPHOLOGY OF GAAS LPE LAYERS - EFFECTS OF SUBSTRATE MISORIENTATION AND INITIAL SUPERCOOLING

被引:8
作者
TOYODA, N
MIHARA, M
HARA, T
机构
[1] Matsushita Research Institute Tokyo Inc, Tokyo Research Laboratory, Matusushita Electronics Corp, Kawasaki, Ikuta, Tama-ku
关键词
D O I
10.1143/JJAP.18.2207
中图分类号
O59 [应用物理学];
学科分类号
摘要
The surface morphology of GsAs LPE layers grown on substrates misoriented by 0.06° to 10° from the (100) plane is studied. In growth from equilibrated solution, two characteristic morphologies appear depending on the misorientation terraces consisting of singular treads and risers when θ<1°, and ripples without singular faces when 1°. In growth from initially supercooled solution, the terraces and ripples disappear, and smooth planar surfaces can be obtained even on misoriented substrates. The development of these morphologies is also studied at the initial growth stage. © 1979 The Japan Society of Applied Physics.
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收藏
页码:2207 / 2213
页数:7
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