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PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
被引:12
作者
:
KAYA, C
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
KAYA, C
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
MA, TP
CHEN, TC
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
CHEN, TC
BARKER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
BARKER, RC
机构
:
[1]
YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
[2]
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 64卷
/ 08期
关键词
:
D O I
:
10.1063/1.341352
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3949 / 3957
页数:9
相关论文
共 24 条
[21]
HOLE CONDUCTION IN SI3N4 FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(09)
: 617
-
619
[22]
DETERMINATION OF SIGN OF CARRIER TRANSPORTED ACROSS SIO2-FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
WEINBERG, ZA
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
JOHNSON, WC
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
LAMPERT, MA
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(01)
: 42
-
43
[23]
CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS
YOKOYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
YOKOYAMA, S
KAJIHARA, N
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
KAJIHARA, N
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
OSAKA, Y
YOSHIHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
YOSHIHARA, T
ABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
ABE, H
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(10)
: 5470
-
5474
[24]
1960, XRAY POWDER DATA FIL, P640
←
1
2
3
→
共 24 条
[21]
HOLE CONDUCTION IN SI3N4 FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(09)
: 617
-
619
[22]
DETERMINATION OF SIGN OF CARRIER TRANSPORTED ACROSS SIO2-FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
WEINBERG, ZA
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
JOHNSON, WC
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
LAMPERT, MA
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(01)
: 42
-
43
[23]
CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS
YOKOYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
YOKOYAMA, S
KAJIHARA, N
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
KAJIHARA, N
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
OSAKA, Y
YOSHIHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
YOSHIHARA, T
ABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
ABE, H
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(10)
: 5470
-
5474
[24]
1960, XRAY POWDER DATA FIL, P640
←
1
2
3
→