HOLE CONDUCTION IN SI3N4 FILMS ON SI

被引：50

作者：

WEINBERG, ZA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：617 / 619

页数：3

共 10 条

[1] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J].

ARNETT, PC ;

DIMARIA, DJ .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :34-36

[2] CONTACT CURRENTS IN SILICON-NITRIDE [J].

ARNETT, PC ;

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2092-2097

[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

BROWN, GA ;

ROBINETT.WC ;

CARLSON, HG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :948-&

[4] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION [J].

DIMARIA, DJ ;

ARNETT, PC .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :711-713

[5] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

[6]

Klein Naomi, COMMUNICATION

[7] PROPERTIES OF VAPOR-DEPOSITED SILICON-NITRIDE FILMS WITH VARYING EXCESS SI CONTENT [J].

TANABASHI, K ;

KOBAYASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) :641-646

[8] HOLE CONDUCTION AND VALENCE-BAND STRUCTURE OF SI3N4 FILMS ON SI [J].

WEINBERG, ZA ;

POLLAK, RA .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :254-255

[9] HOLE INJECTION AND TRANSPORT IN SIO2-FILMS ON SI [J].

WEINBERG, ZA .

APPLIED PHYSICS LETTERS, 1975, 27 (08) :437-439

[10] ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS [J].

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :256-258

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