PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

KAYA, C

MA, TP

CHEN, TC

BARKER, RC

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3949 / 3957

页数：9

共 24 条

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[13] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2)
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1251 - 1258
[14] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
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[15] MURR LE, 1970, ELECTRON OPTICAL APP, P278
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2324 - 2329
[17] EFFECT OF DEPOSITED METALS ON CRYSTALLIZATION TEMPERATURE OF AMORPHOUS GERMANIUM FILM
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) : 1056 - &
[18] A MODEL DESCRIBING THE ELECTRICAL BEHAVIOR OF A-SIN-H ALLOYS
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1408 - 1416
[19] CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS
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WHITE, MH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 899 - 906
[20] STUTZEL H, 1987, JNCS, V90, P267

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