PROPERTIES OF PLASMA-DEPOSITED SI-RICH SILICON-NITRIDE FILMS IN CURRENT ENHANCEMENT INJECTORS

被引：7

作者：

KAYA, C

MA, TP

BARKER, RC

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3958 / 3964

页数：7

共 14 条

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[3] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
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[4] FORMATION OF ALUMINUM SILICIDE BETWEEN 2 LAYERS OF AMORPHOUS-SILICON
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 933 - 934
[5] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[6] KARCHER R, 1984, PHYS REV B, V30, P1989
[7] PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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MA, TP
CHEN, TC
BARKER, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 3949 - 3957
[8] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2)
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1251 - 1258
[9] PLASMA DEPOSITION AND CHARACTERIZATION OF THIN SILICON-RICH SILICON-NITRIDE FILMS
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FRIDMANN, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2324 - 2329
[10] THE VARIATION OF PHYSICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE WITH THEIR COMPOSITIONS
NGUYEN, VS
BURTON, S
PAN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2348 - 2358

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