PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

[1] ANDREWS KW, 1967, ELECTRON DIFFRACTION, P150

[2] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[3] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[4] CHEMICAL HETEROGENEITY IN OFF STOICHIOMETRY A-SIXNYHZ FROM A COLLECTIVE VIBRATIONAL-MODES STUDY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 917 - 920

[5] COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[6] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 179 - 181

[7] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4825 - 4842

[8] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992

[9] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[10] MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1015 - 1024

[1] ANDREWS KW, 1967, ELECTRON DIFFRACTION, P150

[2] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[3] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[4] CHEMICAL HETEROGENEITY IN OFF STOICHIOMETRY A-SIXNYHZ FROM A COLLECTIVE VIBRATIONAL-MODES STUDY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 917 - 920

[5] COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[6] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 179 - 181

[7] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4825 - 4842

[8] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992

[9] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[10] MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1015 - 1024