CHARACTERIZATION OF N-CHANNEL GERMANIUM MOSFET WITH GATE INSULATOR FORMED BY HIGH-PRESSURE THERMAL-OXIDATION

被引：8

作者：

CRISMAN, EE ^{[1
]}

LEE, JI ^{[1
]}

STILES, PJ ^{[1
]}

GREGORY, OJ ^{[1
]}

机构：

[1] UNIV RHODE ISL,DEPT CHEM ENGN,KINGSTON,RI 02881

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 01期

关键词：

D O I：

10.1049/el:19870006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：8 / 10

页数：3

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