SHARP BORON SPIKES IN SILICON GROWN BY FAST GAS SWITCHING CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

ROKSNOER, PJ

MAES, JWFM

VINK, AT

VRIEZEMA, CJ

ZALM, PC

机构：

[1] Philips Research Laboratories

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doping spikes in Si have been grown by fast gas switching chemical vapor deposition at 800 or 850-degrees-C using Si2H6 in 0.03 or 0.1 atm H-2, respectively. The B2H6 doping gas was added for 2 s in two ways, viz. during growth, or as a flush while the Si2H6 was interrupted. High-resolution secondary-ion mass spectrometry (HR-SIMS) analysis has revealed the sharpest as-measured SIMS dopant profiles reported for Si grown by deposition from the gas phase. Electrical measurements show the sheet resistivity of the B spikes to be as low as 580 OMEGA/square.

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页码：711 / 713

页数：3

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