INFLUENCE OF HELIUM DILUTION ON PHYSICOCHEMICAL AND DEFECT PROPERTIES OF PECVD SILICON OXYNITRIDE FILMS

被引：6

作者：

MICHAILOS, J

CROS, Y

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90416-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：16 / 24

页数：9

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