MASS-TRANSPORT AND CRYSTAL-GROWTH OF CADMIUM TELLURIDE BY PVT

被引:9
作者
WIEDEMEIER, H
BAI, YC
机构
[1] Department of Chemistry, Rensselaer Polytechnic Institute, Troy, 12180-3590, New York
[2] Changchun Institute of Physics, Chinese Academy of Sciences, Changchun
关键词
CDTE; MASS TRANSPORT RATES; PVT; CRYSTAL GROWTH;
D O I
10.1007/BF02662827
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Systematic mass transport rate studies of CdTe in closed ampoules demonstrate the influence of source material synthesis and pretreatment on the physical vapor transport properties of this material. Minute deviations from the nominal stoichiometric composition of CdTe reduce the mass flux by several orders of magnitude. These observations could explain the large discrepancies in vapor transport and crystal growth rates of CdTe reported in the literature. Crystal growth experiments show that the unseeded vapor growth of CdTe by this technique yields crystal boules with large single crystalline grains. The results of x-ray diffraction and of chemical etching studies reveal that the single crystallinity of the grains is comparable to that of of CdTe grown by other techniques. The combined results are promising for the further refinement of the vapor transport and crystal growth of CdTe.
引用
收藏
页码:1373 / 1381
页数:9
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