PREPARATION OF CUBIC BORON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF BF3, N2 AND H2 GAS-MIXTURES

被引：7

作者：

MENDEZ, JM ^{[1
]}

MUHL, S ^{[1
]}

FARIAS, M ^{[1
]}

SOTO, G ^{[1
]}

COTAARAIZA, L ^{[1
]}

机构：

[1] UNIV NACL AUTONOMA MEXICO,INST FIS,ENSENADA LAB,ENSENADA 22800,BAJA CALIFORNIA,MEXICO

来源：

SURFACE & COATINGS TECHNOLOGY | 1991年 / 49卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(91)90094-D

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Boron nitride thin films were prepared by plasma-enhanced chemical vapour deposition (PECVD) of BF3, H-2 and N2 gas mixtures. Fourier transform IR (FTIR) spectroscopy and X-ray analysis reveal that the films deposited on crystalline substrates show signs of cubic and hexagonal phases present within the atomic network. The index of refraction and the film thickness were determined by ellipsometry. The deposition rate increases with temperature and saturates a high plasma powers. Values of n are in the range 1.63-1.77, and the optical gap varies from 5.0 to 5.6 eV depending on the preparation conditions (the presence of contaminants also alters this property). The ratio of N2 to H-2 in the flow affects the properties of the films.

引用

页码：422 / 426

页数：5

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