MODELING OF CHARGE-INJECTION EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES

[1] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (02) : 245 - 250

[4] EFFECTS OF TEMPERATURE ANNEALING ON CHARGE-INJECTION-INDUCED TRAPPING IN GATE OXIDES OF METAL-OXIDE-SILICON TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1563 - 1568

[5] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[6] BALK P, 1983, C SER I PHYSICS, V69, P63

[7] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[8] ON THE MECHANISM OF DIELECTRIC-BREAKDOWN OF SOLIDS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1980, 15 (03): : 225 - 240

[9] A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3926 - 3944

[10] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[1] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (02) : 245 - 250

[4] EFFECTS OF TEMPERATURE ANNEALING ON CHARGE-INJECTION-INDUCED TRAPPING IN GATE OXIDES OF METAL-OXIDE-SILICON TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1563 - 1568

[5] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[6] BALK P, 1983, C SER I PHYSICS, V69, P63

[7] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[8] ON THE MECHANISM OF DIELECTRIC-BREAKDOWN OF SOLIDS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1980, 15 (03): : 225 - 240

[9] A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3926 - 3944

[10] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167